Posts Tagged ‘EUV’
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October 22, 2017

Samsung in Talks to Purchase 10 EUV Production Machines from ASML

In a recent article, Business Korea reports that Samsung is in talks with ASML to purchase 10 EUV production machines at a cost of $176.52 million each.

As semiconductor production processes shrinks below the recently introduced 8nm LPP process, printing chips with the current photochemical etching techniques will become much more difficult resulting in the need for the new EUV production process. Samsung has been aggressively developing chips utilizing EUV (Extreme Ultra Violet) etching technology as they plan on starting production of chips using the 7nm EUV process as early as 2018.

What’s interesting about Samsung’s recent order for EUV [...]

 
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October 18, 2017

Samsung Readies 8nm LPP FinFET for Production

Samsung has announced today that its 8nm LPP FinFET process has been qualified and ready for production three months ahead of schedule.

According to the announcement, Samsung’s 8nm LPP will bring up to 10% power efficiency and 10% area reduction over the 10nm LPP thanks to the narrower metal pitch. The 8nm LPP node will be Samsung’s last node before transitioning to 7nm EUV (Extreme Ultra Violet).

Samsung states that the 8nm LPP will soon transition into stable mass production using current production techniques used for the 10nm LPP node.

“With the qualification completed three months ahead of schedule, we have commenced 8LPP production,” [...]

 
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September 11, 2017

Samsung 11nm LPP, 7nm LPP with EUV Slated for 2018

Samsung is continuing the push to the limits of process technology as the company recently revealed two of its newest manufacturing processes, 11nm LPP (Low Power Plus) and 7nm LPP with EUV.

According to the announcement, Samsung’s new 11nm LPP is an alternative process to the 10nm FinFET process designed for mid-range to high end mobile processors. The 11nm LPP process offers up to 15% higher performance and up to 10% chip area reduction while drawing the same amount of power as their current 14nm LPP process. The new process is scheduled for production in the 1H2018.

Following the 11nm LPP process is the 7nm LPP process with EUV (Extreme Ultra Violet) [...]

 
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July 4, 2017

Samsung’s New Pyeongtaek V-NAND Fab Begins Mass Production of 64-Layer V-NAND

Samsung announced today that its new fab in Pyeongtaek, South Korea has entered mass production and is shipping its first products to customers. The newly-opened plant which will be the largest single fab in the industry will focus on production of Samsung’s latest 4th generation, 64-layer 3D V-NAND. Samsung’s 64-layer TLC 3D NAND enables capacities of up to 256Gbit per chip bringing increased performance and storage capacity to consumer and enterprise devices. The new factory represents a major step towards Samsung’s goal of shifting 50% of its production to 64-Layer 3D NAND by the end of this year.

Within the next four years, Samsung is also [...]

 
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June 22, 2017

Qualcomm Strikes 7nm Chip Deal with TSMC

According to DigiTimes, TSMC has won the bid to manufacture Qualcomm’s baseband chips on the 7nm node. The chip order is for the baseband processors only and not for application processors. Qualcomm is still making a decision between Samsung and TSMC for the production of its next-generation APs, and is waiting to see the second generation 7nm products from both companies before it makes a decision.

Both Samsung and TSMC will be switching from HKMG to EUV process technology at the 7nm node. Samsung announced that its 7nm Low Power Plus transistors made using EUV will be available in 2018, while TSMC said its 7nm EUV node will be ready by 2019.

TSMC [...]

 
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June 9, 2017

IBM Research Alliance Develops 5nm Transistor – 40% Improved Performance, 75% Improved Power Efficiency

IBM Research Alliance recently announced that they’ve developed a process to produce the world’s first 5nm transistors. The new transistors will allow IBM to squeeze as much as 30 billion transistors into a chip just 50mm² resulting in as much as 40% improvement in performance at the same power or a 75% reduction in power at the same level of performance when compared to current generation cutting edge 10nm technology.

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February 9, 2017

TSMC 7nm Process Ready to Go, Samsung 7nm Still in Development

At the International Solid State Circuit Conference (ISSCC), both TSMC and Samsung had working chips samples built on their respective 7nm nodes. However, the two companies gave very different outlooks on their readiness.

According to the presentation offered by TSMC, they described the condition of their 7nm node as “healthy”. Samsung on the other hand, had a bit less confidence in its production method, showcasing a development chip that suggests 7nm chips may not be ready for at least a few more years.

The reason behind the contradicting prospects is due to the different manufacturing techniques. Because TSMC will likely be producing the Apple [...]

 
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November 2, 2016

Samsung Updates 14nm, 10nm Process, Showcases 7nm EUV Wafer at Samsung Foundry Forum

Samsung recently held the Samsung Foundry Forum event at their Device Solutions America headquarters and made some big announcements for their foundry customers.

Among the new announcements is the introduction of Samsung’s 14LPU 4th Generation 14nm FinFET process. 14LPU builds on their 3rd Generation 14LPC process, delivering additional performance at the same power and design rules of 14LPC. According to Samsung, 14LPU will be aimed at high performance and compute intensive applications.

Although Samsung just began mass production of products based on their 10nm FinFET process last month, they also announced their 3rd Generation 10LPU 10nm FinFET [...]

 
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September 15, 2016

GLOBALFOUNDRIES 7nm FinFET Process Will Provide 30% Performance Increase, Double Logic Density

GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018.

According to the GLOBALFOUNDRIES, their new 7nm FinFET technology will deliver twice the logic density and 30% performance increase over current 16nm and 14nm FinFET processes. To accelerate development, the new process will significantly utilize tools and processes from their current 14nm FinFET process. Like competing foundries, GLOBALFOUNDRIES 7nm FinFET process will initially utilize an optical lithography, but will offer compatibility with EUV (Extreme UltraViolet) lithography as EUV technology [...]

 
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August 17, 2016

GlobalFoundries Confirmed Skipping 10nm, Jumping Directly to 7nm Process

In a recent interview with SemiWiki, Gary Patton, CEO of GlobalFoundries, confirmed that GlobalFoundries will be skipping the 10nm process and jumping straight into 7nm. They believe that 10nm, just like 20nm will be a very short lived node and isn’t worth the effort.

GlobalFoundries currently offers 14nm FinFET thanks to a licensing agreement with Samsung, but is further working on developing a 7nm process thanks to an acquisition of IBM’s Microelectronics business back in July of last year. Their first 7nm process will be developed with optical, but will also support EUV (Extreme Ultraviolet Lithography) when the technology is ready.

No [...]

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