As reported previously, Samsung unveiled their 3rd generation 3D V-NAND and at their keynote, Samsung shared a few more details on the new NAND.
As expected, the 3rd generation 256Gb 3-bit 48-Layer MLC 3D V-NAND has 1.4x more density per wafer.
With the additional density is also additional performance and power efficiency. According to Samsung, their 48-layer 3-bit MLC 3D V-NAND produces up to 2x the performance sequential reads and 2.2x the performance sequential writes. Power efficiency is also significantly improved with reductions of up to 63% lower read and 54% write power consumption.
Samsung is also extremely proud that the 256Gb 3rd generation 3-bit MLC 3D V-NAND is already in production. During the keynote, Samsung told the audience that they would be making a rolling change on the currently shipping Samsung 850 EVO with the new 3rd generation 3D V-NAND.