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Toshiba Begins Construction of Fab 6 and R&D Center
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Toshiba Begins Construction of Fab 6 and R&D Center

Sam ChenFebruary 9, 2017

Despite Toshiba’s financial woes, their memory division is pressing on, recently announcing that they’ve begun construction on their latest semiconductor fabrication facility, Fab 6 at Yokkaichi, Japan.

Like all the other new fabs that were constructed or retrofitted, Fab 6 will be built to produce Toshiba’s latest BiCS 3D NAND flash. Construction of the new fab will occur in two phases with Phase 1 slated to be complete in the summer of 2018. This will allow Toshiba to re-evaluate and re-asses continued investment in the event NAND flash demand takes a nosedive.

In addition to Fab 6, Toshiba also announced the construction of a new Memory R&D center which will be complete in December of this year. The facility will be used to develop next generation BiCS FLASH and new memory technologies.

About The Author
Sam Chen
Hardware and Technology Enthusiast. SSD Evangelist. Editor-in-Chief.

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