Posts Tagged ‘SK Hynix’
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April 11, 2017

SK Hynix Introduces 256Gb 72-Layer TLC 3D NAND

SK Hynix is making some major advances in NAND technology as it recently announced its first 256Gb 72-layer TLC 3D NAND flash memory. SK Hynix’s 72-layer 3D NAND follows their 48-layer 3D NAND product which was released just five months ago in November 2016.

According to SK Hynix, the new 72-layer TLC 3D NAND is capable of utilizing existing manufacturing lines allowing for 30% better manufacturing efficiency, 2x faster internal operation speed, 20% higher performance, and 1.5x cell density over previous generation 48-Layer 3D NAND.

The new SK Hynix 72-layer 3D NAND will go into mass production in the 2H2017 initially targeting business use. The company [...]

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March 6, 2017

Samsung Dominates NAND Flash Market in 4Q2016 as Industry Revenues Increase 17.8% QoQ

Amid massive shortages due to increased demand, the NAND Flash market is booming. According to latest report from market intelligence firm, TrendForce, revenues have increased a massive 17.8% quarter over quarter, now reaching a total of $12 Billion in 4Q2016.

Looking at the results, the biggest winners in the 4Q2016 is Micron, which saw revenue increase by 26.9%. This is followed by Intel which saw revenue increase by 25.7%, Western Digital by 22% and Samsung by 19.5%. Toshiba and SK Hynix saw the lowest revenue increases at 8.5% and 9% respectively.

In terms of marketshare, Samsung once again dominated the market by a massive margin. In 4Q2016, Samsung [...]

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February 16, 2017

DRAM Shortages Result in 30% Price Increase in 4Q2016

It’s good to be in the DRAM business these days. According to a recent report from DRAMeXchange, global DRAM revenues have increased 18.2% sequentially for 4Q2016.

Much of the demand is fueled by strong smartphone sales, particularly Chinese brands along with the iPhone 7. This has resulted in massive shortages of PC DRAM, resulting in a 30% price increase over the previous quarter. Server DRAM is expected to follow suit in 1Q2017.

Memory manufacturers are currently increasing efforts to expand DRAM production capacity, but their efforts aren’t expected to be realized until the 2H2017. As a result, the supply problem is expected to continue to [...]

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February 6, 2017

SK Hynix Makes Bid for Stake in Toshiba Memory Business

In a recent report from Reuters, SK Hynix may be among the suitors in the running for a stake in Toshiba’s memory business. According to an undisclosed source, SK Hynix has already submitted an initial bid for Toshiba’s memory business although no information as to how much of a stake SK Hynix is interested in purchasing.

Toshiba had recently fallen on some hard times with a failing nuclear power business and an accounting scandal that left their previous CEO out of a job and the company in billions of dollars in debt. In an attempt to protect the still profitable memory business and help keep Toshiba alive a bit longer, Toshiba spun off the memory business [...]

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January 31, 2017

SK Hynix Readies 4GB 2nd Gen HBM2 for 1Q 2017 Launch

According to SK Hynix 1Q2017 Databook for graphics, it’s confirmed that SK Hynix’s 4GB HBM2 memory modules are getting ready for production in 1Q2017.

One of the hottest consumer products that is expected to take advantage of HBM2 is AMD’s highly anticipated Vega graphics cards. Among the memory lineup, the 5mKGSD SKU is the most likely candidate to be featured on the Vega GPU. The 5mKGSD configuration is 4 stacks tall and features a memory density of 4GB/ stack. At CES 2017, we saw a glimpse of an engineering sample of Vega carrying 2 stacks of HBM2 on its interposer. It was rumored to have 8GB of VRAM, which helps confirm our [...]

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January 11, 2017

SK Hynix Launches First 8GB LPDDR4X Mobile DRAM

In a recent announcement, SK Hynix launched their new 8GB LPDD4X DRAM designed for mobile devices. SK Hynix was able to achieve this by stacking four of their 16Gb dual channel DRAM dies.

Compared to traditional LPDDR4 DRAM, SK Hynix’s LPDDR4X 8GB packages reduce data IO operation voltage by 45%; operating at just 0.6V compared to the 1.1V of the LPDDR4. According to SK Hynix, the reduced data IO operation voltage should translate to 20% reduction in overall power consumption.

Additionally, the new package features a 30% smaller footprint compared to existing LPDDR4 at the same capacity. Its sub-1mm thickness also enables Package-on-Package stacking with a [...]

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October 25, 2016

SK Hynix Reports 60% Profit Increase in 3Q2016, 72-Layer 3D NAND Production to Begin in 2017

With both memory and NAND shortages slated to continue into the end of this year, SK Hynix reported a great 3Q2016, boasting revenues of 4.24 Trillion Korean Won ($3.7 Billion USD) and profits of 726 Billion Korean Won ($640.5 Million USD), representing an 8% increase in revenue and 60% increase in profit over 2Q2016.

According to SK Hynix, the uptick in revenues is largely due to high demand from the launch of new mobile products along with steady demand from the PC segment. DRAM bit shipments is up 8% as PC OEMs began stocking up on inventory prior to the holiday season and demand from the mobile segment has increased thanks to new mobile devices.  DRAM [...]

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October 6, 2016

Toshiba 48-Layer 3D BiCS NAND Discovered in Apple iPhone 7

Some keen eyes from the guys over at TechInsights recently discovered that the NAND onboard the Apple’s iPhone 7 will come from multiple sources. In a number of teardowns of the new smartphone, the iPhone 7 appears to source NAND from SK Hynix and Toshiba. While this isn’t interesting news as these companies are popular suppliers of NAND, what’s interesting is that certain capacities are using Toshiba’s 48-Layer 3D BiCS NAND, which has never been seen previously on a commercial product.

The Toshiba BiCS 3D NAND in question is the Toshiba THGBX6T1T82LFXF which is being used on the iPhone 7 256GB model. TechInsights is currently conducting a full [...]

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August 23, 2016

Samsung, SK Hynix Discuss HBM3 – Faster, Cheaper, Up to 64GB Per Package

Samsung and SK Hynix had a lot to show off in the previous weeks with back to back to back Flash Memory Summit followed by Intel Developer’s Conference and now Hot Chips.

At the HotChips conference, Samsung already talked about what to expect with GDDR6, and both Samsung and SK Hynix also talked about their work on HBM3 (or xHBM, Extreme HBM, HBMx, and whatever else it’s being called these days). HBM3 is expected to be faster, cheaper, more power efficient, and supports higher capacities than current generation HBM2. Those who missed our original article detailing HBM technology, be sure to check it out here.

According to early HBM3 specs, HBM3 will [...]

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August 19, 2016

SK Hynix Mass Producing UFS 2.1 Storage Solution, Claims 3x Faster Than eMMC 5.1

SK Hynix recently announced that they’ve began mass production of their UFS 2.1 storage solution. Ranging in capacities of 32GB, 64GB, and 128GB, SK Hynix is manufacturing their UFS 2.1 solution completely in house with their own firmware, controller, and 2nd generation 3D NAND flash.

According to SK Hynix, their UFS 2.1 storage solution is the fastest embedded flash memory in the world, boasting speeds up to 800MB/s, more than 3x the performance of eMMC 5.1 which is currently the main storage medium used in most mid-range to high end smartphones/tablets.

“SK Hynix is pleased to expect the mobile gadgets such as smartphones to enhance their performances [...]

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