Posts Tagged ‘3D NAND’
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February 12, 2017

CES 2017: Phison Demos E8 Entry Level PCIe NVMe SSD Controller

With the NAND shortage in full effect at CES this year, SSDs didn’t really make much of an appearance at the show. However, we did get a chance to stop by controller vendor, Phison, who had a new entry level PCIe NVMe controller to show.

The new controller is the Phison E8 which is going to be the low cost brother to the Phison E7. The new controller will come in two variants: the PS5008-E8 or PS5008-E8T.

The Phison PS5008-E8 will be a PCIe Gen 3 x2 controller featuring performance up to 1.6GB/s sequential reads and 1.3GB/s sequential writes. Random read/write performance will top out at 240K/220K IOPS respectively. It’ll also feature support [...]

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February 9, 2017

Toshiba Begins Construction of Fab 6 and R&D Center

Despite Toshiba’s financial woes, their memory division is pressing on, recently announcing that they’ve begun construction on their latest semiconductor fabrication facility, Fab 6 at Yokkaichi, Japan.

Like all the other new fabs that were constructed or retrofitted, Fab 6 will be built to produce Toshiba’s latest BiCS 3D NAND flash. Construction of the new fab will occur in two phases with Phase 1 slated to be complete in the summer of 2018. This will allow Toshiba to re-evaluate and re-asses continued investment in the event NAND flash demand takes a nosedive.

In addition to Fab 6, Toshiba also announced the construction of a new Memory [...]

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February 8, 2017

Western Digital, Toshiba Introduces 512Gb, 64-layer TLC BICS 3D NAND

Western Digital and Toshiba had some great news to announce at the International Solid State Circuits Conference (ISSCC) recently as they revealed that they’ve begun initial production of their BICS3 512Gb, 64-layer TLC 3D NAND at their NAND fabrication facility at Yokkaichi, Japan.

The new 512Gb, 64-layer BICS3 TLC 3D NAND will be the highest density NAND dies announced to date, matching Samsung’s 4th Generation V-NAND which also features 64-layers and 512Gb density. Full production of the new BICS3 NAND is expected to begin in 2H2017.

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January 25, 2017

Tsinghua Unigroup to Invest $30 Billion in Nanjing Memory Fab, Increasing Total Fab Investment to $70 Billion

It’s no secret that China wants advanced chip manufacturing technology and will do whatever it takes to get it. However, after several failed attempts by China’s state sponsored technology investment group, Tsinghua Unigroup, to acquire US chip manufacturing companies such as Western Digital and Micron, it appears that they have given up on acquiring the manufacturing capability altogether and have decided invest into building their own manufacturing capability instead.

According to a recent statement from Tsinghua Unigroup, the investment group recently revealed plans to invest $30 billion into the construction and development of a DRAM and 3D NAND fab in [...]

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January 20, 2017

Samsung 850 Pro 4TB Delayed Due to NAND Shortage

At CES 2017, Samsung had originally planned to launch the Samsung 850 Pro 4TB which would’ve made the Samsung 850 Pro not only the fastest consumer SATA SSD on the market, but also the highest capacity as well. However, after scouring the CES show floor for SSD related announcements and not seeing the drive on display at CES 2017, Tom’s Hardware reached out to Samsung’s PR agency for some information where they received the following:

“As a result of the worldwide NAND shortage, Samsung is focused on allocating NAND to products where we see the greatest demand. We will let you know when further updates on the 850 PRO 4TB are available.”

As many [...]

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January 11, 2017

CES 2017: Toshiba Puts 512GB NVMe SSD into Tiny 16x20mm BGA Form Factor

For CES 2017, Toshiba showed off its new BG series SSD in the M.2 1620 BGA and M.2 2230 form factor for ultraportables and mobile devices.

Powered by Toshiba BiCS 3D TLC NAND along with a Toshiba controller, the Toshiba BG series demonstrates the capabilities of Toshiba’s 3D TLC, scaling up to capacities of 512GB in a form factor as small as 16x20mm. In order to achieve this, Toshiba integrated the controller and the NAND into a single package, and as the drive utilizes NVMe’s Host Memory Buffer (HMB) feature which utilizes system DRAM to act as a buffer, DRAM is not required.

The Toshiba BG M.2 1620 SSDs are designed to be integrated into [...]

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December 1, 2016

NAND Flash Prices Continue to Rise as Demand Outpaces Supply

According to a recent report, NAND prices have continued their increase over the 3Q2016 thanks to constrained supply due to the transition from 2D to 3D NAND, and an increase in demand.

Demand for NAND in 3Q2016 grew by 19.6% with the biggest winner being Western Digital who increased their revenues by 26.7% in the quarter. Other big winners include Samsung and SK Hynix who saw revenue increases of 20.6% and 20.3% respectively.

Market share continues to be dominated by Samsung who holds a massive 36.6% marketshare, climbing just slightly over the quarter.

 

Source: TrendForce

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November 26, 2016

Review: Samsung 960 EVO 1TB M.2 PCIe SSD

TLC NAND and PCIe Done Right

When Samsung launched the Samsung 960 series SSD at their annual SSD Global Summit back in September, they promised two new drives – the Samsung 960 PRO and the Samsung 960 EVO.

Last month, we reviewed the Samsung 960 PRO which is designed for performance enthusiasts and professionals. In our testing, it exceeded our expectations making it the fastest M.2 PCIe SSD we’ve ever tested to date. Unforutnately, the Samsung 960 EVO wasn’t available at the time however, Samsung was hopeful that early samples would be available soon.

Fast forward and today we’ll be reviewing the Samsung 960 EVO, which is Samsung’s first [...]

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November 15, 2016

Multiple Chinese Firms to Enter DRAM, NAND Market in 2018

Although the DRAM and NAND industry has seen quite a bit of consolidation over the past 10 years, it looks like some new players from China may be entering the market soon bringing some welcome competition to the market. According to a recent article by DigiTimes, three China based firms may be gearing up to enter the market with all three expected to begin competing for the Chinese market in 2018.

 

Yangtze River Storage Technology (YRST)

YRST, or Yangtze River Storage Technology, is the most promising of the companies as it’s backed by Tsinghua Unigroup, a Chinese state run technology company. YRST already owns a 12-inch wafer fab which is [...]

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October 25, 2016

SK Hynix Reports 60% Profit Increase in 3Q2016, 72-Layer 3D NAND Production to Begin in 2017

With both memory and NAND shortages slated to continue into the end of this year, SK Hynix reported a great 3Q2016, boasting revenues of 4.24 Trillion Korean Won ($3.7 Billion USD) and profits of 726 Billion Korean Won ($640.5 Million USD), representing an 8% increase in revenue and 60% increase in profit over 2Q2016.

According to SK Hynix, the uptick in revenues is largely due to high demand from the launch of new mobile products along with steady demand from the PC segment. DRAM bit shipments is up 8% as PC OEMs began stocking up on inventory prior to the holiday season and demand from the mobile segment has increased thanks to new mobile devices.  DRAM [...]

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